Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Ohshima, T. (Autor:in) / Uedono, A. (Autor:in) / Itoh, H. (Autor:in) / Yoshikawa, M. (Autor:in) / Kojima, K. (Autor:in) / Okada, S. (Autor:in) / Nashiyama, I. (Autor:in) / Abe, K. (Autor:in) / Tanigawa, S. (Autor:in) / Frank, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 857-860
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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