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Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Ohshima, T. (author) / Uedono, A. (author) / Itoh, H. (author) / Yoshikawa, M. (author) / Kojima, K. (author) / Okada, S. (author) / Nashiyama, I. (author) / Abe, K. (author) / Tanigawa, S. (author) / Frank, T. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 857-860
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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