Ion Implanted p^+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor

Bergamini, F. / Rao, S. P. / Poggi, A. et al. | British Library Online Contents | 2006

Implantation and annealing studies of Tm-implanted GaN

Lorenz, K. / Alves, E. / Wahl, U. et al. | British Library Online Contents | 2003

Defect annealing in ion implanted silicon carbide

Calcagno, L. / Grimaldi, M. G. / Musumeci, P. | British Library Online Contents | 1997

Current Analysis of Ion Implanted p^+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Nipoti, R. / Bergamini, F. / Moscatelli, F. et al. | British Library Online Contents | 2006

Defect production and annealing in ion implanted silicon carbide

Heft, A. / Wendler, E. / Bachmann, T. et al. | British Library Online Contents | 1995