Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC
Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC
Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC
Luo, Y. (Autor:in) / Yan, F. (Autor:in) / Tone, K. (Autor:in) / Zhao, J. H. (Autor:in) / Crofton, J. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1013-1016
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC
| British Library Online Contents | 2011
Al^+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts
| British Library Online Contents | 2013
| British Library Online Contents | 2006
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
| British Library Online Contents | 2009
Thermostable Ohmic Contacts on p-Type SiC
| British Library Online Contents | 1998