Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
Placidi, M. (Autor:in) / Perez-Tomas, A. (Autor:in) / Constant, A. (Autor:in) / Rius, G. (Autor:in) / Mestres, N. (Autor:in) / Millan, J. (Autor:in) / Godignon, P. (Autor:in)
APPLIED SURFACE SCIENCE ; 255 ; 6057-6060
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Al^+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts
British Library Online Contents | 2013
|Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC
British Library Online Contents | 2011
|Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC
British Library Online Contents | 2000
|Forming ohmic Ag/SnO2 contacts
British Library Online Contents | 2015
|Composite Ohmic Contacts to SiC
British Library Online Contents | 2006
|