Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The Effect of Si:C Source Ratio on SiO~2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
The Effect of Si:C Source Ratio on SiO~2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
The Effect of Si:C Source Ratio on SiO~2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
Chung, G. Y. (Autor:in) / Tin, C. C. (Autor:in) / Won, J. H. (Autor:in) / Williams, J. R. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1097-1100
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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