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The Effect of Si:C Source Ratio on SiO~2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
The Effect of Si:C Source Ratio on SiO~2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
The Effect of Si:C Source Ratio on SiO~2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
Chung, G. Y. (author) / Tin, C. C. (author) / Won, J. H. (author) / Williams, J. R. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 1097-1100
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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