Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

Chen, Y. / Kimoto, T. / Takeuchi, Y. et al. | British Library Online Contents | 2004

Homoepitaxial diamond chemical vapor deposition for ultra-light doping

Teraji, T. / Isoya, J. / Watanabe, K. et al. | British Library Online Contents | 2017

Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition

Ishida, Y. / Takahashi, T. / Okumura, H. et al. | British Library Online Contents | 2000

Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition

Nishitani-Gamo, M. / Sakaguchi, I. / Takami, T. et al. | British Library Online Contents | 1999

Nitrogen and Bias Effect on Homoepitaxial Diamond Growth by Hot-Filament Chemical Vapor Deposition

Tsai, H.Y. / Chang, C.C. / Wu, C.W. | British Library Online Contents | 2010