Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Danielsson, O. / Jonsson, S. / Henry, A. et al. | British Library Online Contents | 2002

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Kojima, K. / Takahashi, T. / Ishida, Y. et al. | British Library Online Contents | 2004

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Nishio, J. / Kushibe, M. / Masahara, K. et al. | British Library Online Contents | 2002

Thermal Plasma Chemical Vapor Deposition

Heberlein, J. / Pfender, E. | British Library Online Contents | 1993

Epitaxial nucleation of polycrystalline silicon carbide during chemical vapor deposition

Sheldon, B. W. / Besmann, T. M. / More, K. L. et al. | British Library Online Contents | 1993