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Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
Saks, N. S. (Autor:in) / Mani, S. S. (Autor:in) / Agarwal, A. K. (Autor:in) / Hegde, V. S. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 737-740
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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