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ESR Study of Delamination in H^+ Implanted Silicon Carbide
ESR Study of Delamination in H^+ Implanted Silicon Carbide
ESR Study of Delamination in H^+ Implanted Silicon Carbide
Chowdhury, E. A. (Autor:in) / Seki, T. (Autor:in) / Izumi, T. (Autor:in) / Tanaka, H. (Autor:in) / Hara, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 813-816
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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Delamination of Thin Layers in H^+ Implanted Silicon Carbide
British Library Online Contents | 1998
|Oxidation of ion implanted silicon carbide
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|Stoichiometric Disturbances in Ion Implanted Silicon Carbide
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|Defect annealing in ion implanted silicon carbide
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|Range Distributions of Implanted Ions in Silicon Carbide
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