Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy

Koizumi, A. / Fujiwara, Y. / Inoue, K. et al. | British Library Online Contents | 2003

Room temperature 1.5mm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy

Fujiwara, Y. / Koizumi, A. / Urakami, A. et al. | British Library Online Contents | 2003

Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

Fujiwara, Y. / Nonogaki, Y. / Oga, R. et al. | British Library Online Contents | 2003

Control of defects in GaAs/GaInP interface grown by MOVPE

Arai, T. / Uchida, K. / Tokunaga, H. et al. | British Library Online Contents | 1995

Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors

Richter, E. / Brunner, F. / Gramlich, S. et al. | British Library Online Contents | 1999