Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO~2 Stacked Gate Dielectrics

Hosoi, T. / Kagei, Y. / Kirino, T. et al. | British Library Online Contents | 2010

Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm

Trentzsch, M. / Golz, C. / Wieczorek, K. et al. | British Library Online Contents | 2008

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO2 interfaces

Niimi, H. / Yang, H. / Lucovsky, G. et al. | British Library Online Contents | 2000

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Hinkle, C. L. / Fulton, C. / Nemanich, R. J. et al. | British Library Online Contents | 2004

Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics

Reiner, J. W. / Cui, S. / Liu, Z. et al. | British Library Online Contents | 2010