Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces: Fid-Bau Portal

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Lucovsky, G. / Niimi, H. / Wu, Y. / Yang, H.

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Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Lucovsky, G. / Niimi, H. / Wu, Y. / Yang, H.

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Lucovsky, G. / Niimi, H. / Wu, Y. / Yang, H.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Contributors:

Lucovsky, G. (author) / Niimi, H. (author) / Wu, Y. (author) / Yang, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 159-160 ; 50-61

Publication date:

2000-01-01

Size:

12 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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