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Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope
Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope
Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope
Hasunuma, R. (Autor:in) / Ando, A. (Autor:in) / Miki, K. (Autor:in) / Nishioka, Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 162/163 ; 547-552
01.01.2000
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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