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Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope

Hasunuma, R. / Ando, A. / Miki, K. / Nishioka, Y.

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Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope

Hasunuma, R. / Ando, A. / Miki, K. / Nishioka, Y.

Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope

Hasunuma, R. / Ando, A. / Miki, K. / Nishioka, Y.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope

Contributors:

Hasunuma, R. (author) / Ando, A. (author) / Miki, K. (author) / Nishioka, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 162/163 ; 547-552

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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