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Raman back-scattering study of damaged and strain subsurface layers in GaAs wafers
Raman back-scattering study of damaged and strain subsurface layers in GaAs wafers
Raman back-scattering study of damaged and strain subsurface layers in GaAs wafers
Fengyi, Z. (Autor:in) / Hailing, T. (Autor:in) / Jiayu, Q. (Autor:in) / Yonghong, W. (Autor:in) / Ping, S. (Autor:in) / Jing, W. (Autor:in)
RARE METALS -BEIJING- ENGLISH EDITION ; 19 ; 179-182
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
669
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