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    Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by slow positron implantation spectroscopy

    New search for: Anwand, W.
    New search for: Brauer, G.
    New search for: Skorupa, W.

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    Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by slow positron implantation spectroscopy

    New search for: Anwand, W.
    New search for: Brauer, G.
    New search for: Skorupa, W.

    Access

    Access via TIB
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    Order at Subito €

    Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by slow positron implantation spectroscopy

    New search for: Anwand, W.
    New search for: Brauer, G.
    New search for: Skorupa, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by slow positron implantation spectroscopy

    Contributors:

    Anwand, W. (author) / Brauer, G. (author) / Skorupa, W. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 184 ; 247-251

    Publication date:

    2001-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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