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A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures
A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures
A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures
Capano, M. A. (Autor:in)
APPLIED SURFACE SCIENCE ; 184 ; 317-322
01.01.2001
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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