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A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures

Capano, M. A.

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A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures

Capano, M. A.

A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures

Capano, M. A.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperatures

Contributors:

Capano, M. A. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 317-322

Publication date:

2001-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Stoichiometric Disturbances in Ion Implanted Silicon Carbide

Morvan, E. / Monserrat, J. / Rebollo, J. et al. | British Library Online Contents | 1998

Defect annealing in ion implanted silicon carbide

Calcagno, L. / Grimaldi, M. G. / Musumeci, P. | British Library Online Contents | 1997

Range Distributions of Implanted Ions in Silicon Carbide

Janson, M. S. / Linnarsson, M. K. / Hallen, A. et al. | British Library Online Contents | 2002

Raman Image Study of Defects in Ion-implanted and Post-Annealed Silicon

Mizoguchi, K. / Nakashima, S. / Harima, H. et al. | British Library Online Contents | 1995