Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

Isoird, K. / Lazar, M. / Locatelli, M.-L. et al. | British Library Online Contents | 2002

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes

Ivanov, P.A. / Grekhov, I.V. / Potapov, A.S. et al. | British Library Online Contents | 2013

Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes

Domeij, M. / Breitholtz, B. / Linnros, J. et al. | British Library Online Contents | 1998

Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime

Levinshtein, M.E. / Ivanov, P.A. / Palmour, J. et al. | British Library Online Contents | 2011

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes

Ortolland, S. / Locatelli, M. L. / Planson, D. et al. | British Library Online Contents | 1998