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Study of 6H-SiC high voltage bipolar diodes under reverse biases

Isoird, K. / Lazar, M. / Ottaviani, L. / Locatelli, M. L. / Raynaud, C. / Planson, D. / Chante, J. P.

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Study of 6H-SiC high voltage bipolar diodes under reverse biases

Isoird, K. / Lazar, M. / Ottaviani, L. / Locatelli, M. L. / Raynaud, C. / Planson, D. / Chante, J. P.

Study of 6H-SiC high voltage bipolar diodes under reverse biases

Isoird, K. / Lazar, M. / Ottaviani, L. / Locatelli, M. L. / Raynaud, C. / Planson, D. / Chante, J. P.

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Document information

Title:

Study of 6H-SiC high voltage bipolar diodes under reverse biases

Contributors:

Isoird, K. (author) / Lazar, M. (author) / Ottaviani, L. (author) / Locatelli, M. L. (author) / Raynaud, C. (author) / Planson, D. (author) / Chante, J. P. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 477-482

Publication date:

2001-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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