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Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD
Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD
Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD
Yamashiro, T. (Autor:in) / Kikuchi, T. (Autor:in) / Ishii, M. (Autor:in) / Honma, F. (Autor:in) / Sakuraba, M. (Autor:in) / Matsuura, T. (Autor:in) / Murota, J. (Autor:in) / Tsuchiya, T. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 120 - 124
01.01.2002
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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