Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD: Fid-Bau Portal

Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD

Yamashiro, T. / Kikuchi, T. / Ishii, M. / Honma, F. / Sakuraba, M. / Matsuura, T. / Murota, J. / Tsuchiya, T.

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Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD

Yamashiro, T. / Kikuchi, T. / Ishii, M. / Honma, F. / Sakuraba, M. / Matsuura, T. / Murota, J. / Tsuchiya, T.

Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD

Yamashiro, T. / Kikuchi, T. / Ishii, M. / Honma, F. / Sakuraba, M. / Matsuura, T. / Murota, J. / Tsuchiya, T.

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Title:

Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD

Contributors:

Yamashiro, T. (author) / Kikuchi, T. (author) / Ishii, M. (author) / Honma, F. (author) / Sakuraba, M. (author) / Matsuura, T. (author) / Murota, J. (author) / Tsuchiya, T. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 120 - 124

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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