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Dopant diffusion in SiGe: modeling stress and Ge chemical effects
Dopant diffusion in SiGe: modeling stress and Ge chemical effects
Dopant diffusion in SiGe: modeling stress and Ge chemical effects
Pakfar, A. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 225 - 228
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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