A platform for research: civil engineering, architecture and urbanism
Dopant diffusion in SiGe: modeling stress and Ge chemical effects
Dopant diffusion in SiGe: modeling stress and Ge chemical effects
Dopant diffusion in SiGe: modeling stress and Ge chemical effects
Pakfar, A. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 225 - 228
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Stress effects on defects and dopant diffusion in Si
British Library Online Contents | 2001
|Dopant diffusion control by adding carbon into Si and SiGe: principles and device application
British Library Online Contents | 2001
|Dopant redistribution and formation of electrically active complexes in SiGe
British Library Online Contents | 2001
|British Library Online Contents | 2005
|Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
British Library Online Contents | 2002
|