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Dopant diffusion control by adding carbon into Si and SiGe: principles and device application
Dopant diffusion control by adding carbon into Si and SiGe: principles and device application
Dopant diffusion control by adding carbon into Si and SiGe: principles and device application
Osten, H. J. (Autor:in) / Knoll, D. (Autor:in) / Rucker, H. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 87 ; 262 - 270
01.01.2001
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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