Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions: experimental and computer simulation study: Fid-Bau Portal

Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions: experimental and computer simulation study

Ignatova, V. / Chakarov, I. / Torrisi, A. / Licciardello, A.

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Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions: experimental and computer simulation study

Ignatova, V. / Chakarov, I. / Torrisi, A. / Licciardello, A.

Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions: experimental and computer simulation study

Ignatova, V. / Chakarov, I. / Torrisi, A. / Licciardello, A.

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Titel:

Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions: experimental and computer simulation study

Beteiligte:

Ignatova, V. (Autor:in) / Chakarov, I. (Autor:in) / Torrisi, A. (Autor:in) / Licciardello, A. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 187 ; 145-153

Erscheinungsdatum:

01.01.2002

Format / Umfang:

9 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

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