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Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions: experimental and computer simulation study
Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions: experimental and computer simulation study
Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions: experimental and computer simulation study
Ignatova, V. (author) / Chakarov, I. (author) / Torrisi, A. (author) / Licciardello, A. (author)
APPLIED SURFACE SCIENCE ; 187 ; 145-153
2002-01-01
9 pages
Article (Journal)
English
DDC:
621.35
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