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Interfacial study of Si-Ge multilayers grown using ultrahigh-vacuum chemical vapor deposition
Interfacial study of Si-Ge multilayers grown using ultrahigh-vacuum chemical vapor deposition
Interfacial study of Si-Ge multilayers grown using ultrahigh-vacuum chemical vapor deposition
Lian, D. (Autor:in) / Wen, H.-C. (Autor:in)
INTERNATIONAL JOURNAL OF MATERIALS RESEARCH ; 104 ; 542-546
01.01.2013
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
669.9
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