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Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition
Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition
Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition
APPLIED SURFACE SCIENCE ; 252 ; 7594-7598
01.01.2006
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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