Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy

Kobayashi, S. / Imai, S. / Hayami, Y. et al. | British Library Online Contents | 2000

Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

Ono, R. / Fujimaki, M. / Senzaki, J. et al. | British Library Online Contents | 2002

Isothermal capacitance transient spectroscopy for deep levels in Co- and Mn-doped ZnO single crystals

Ohashi, N. / Tanaka, J. / Ohgaki, T. et al. | British Library Online Contents | 2002

Evaluation of deep levels in manganese-doped positive temperature coefficient of resistivity ceramics by isothermal capacitance transient spectroscopy

Han, E. H. / Kim, M. C. / Park, S. J. | British Library Online Contents | 1992

Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition

Kato, M. / Tanaka, S. / Ichimura, M. et al. | British Library Online Contents | 2005