Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical Rotation
Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical Rotation
Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical Rotation
Schoner, A. (Autor:in) / Konstantinov, A. (Autor:in) / Karlsson, S. (Autor:in) / Berge, R. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 187-190
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
British Library Online Contents | 2012
|Structural characterization of epitaxial ferromagnetic MnSb layers grown by hot-wall epitaxy
British Library Online Contents | 1996
|Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD
British Library Online Contents | 2002
|Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
British Library Online Contents | 2002
|4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106
British Library Online Contents | 2014
|