Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical Rotation: Fid-Bau Portal

Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical Rotation

Schoner, A. / Konstantinov, A. / Karlsson, S. / Berge, R.

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Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical Rotation

Schoner, A. / Konstantinov, A. / Karlsson, S. / Berge, R.

Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical Rotation

Schoner, A. / Konstantinov, A. / Karlsson, S. / Berge, R.

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Check availability in my library

Order at Subito €

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Document information

Title:

Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical Rotation

Contributors:

Schoner, A. (author) / Konstantinov, A. (author) / Karlsson, S. (author) / Berge, R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 187-190

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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