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Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
Jeong, J. K. (Autor:in) / Um, M. Y. (Autor:in) / Na, H. J. (Autor:in) / Kim, B. S. (Autor:in) / Song, I. B. (Autor:in) / Kim, H. J. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 267-270
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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