Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Homoepitaxial Growth of 4H-SiC Using CH~3Cl Carbon Precursor
Homoepitaxial Growth of 4H-SiC Using CH~3Cl Carbon Precursor
Homoepitaxial Growth of 4H-SiC Using CH~3Cl Carbon Precursor
Koshka, Y. (Autor:in) / Lin, H. D. (Autor:in) / Melnychuk, G. (Autor:in) / Mazzola, M. S. (Autor:in) / Wyatt, J. L. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
British Library Online Contents | 2006
|Homoepitaxial Growth of Al-Doped 4H-SiC using Bis-Trimethylsilylmethane Precursor
British Library Online Contents | 2004
|British Library Online Contents | 2006
|Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
British Library Online Contents | 2002
|British Library Online Contents | 2009
|