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SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using 18O implantation
SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using 18O implantation
SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using 18O implantation
Hayashi, S. (Autor:in) / Sasaki, T. (Autor:in) / Kawamura, K. (Autor:in) / Matsumura, A. (Autor:in) / Yanagihara, K. (Autor:in) / Tanaka, K. (Autor:in)
APPLIED SURFACE SCIENCE ; 203-204 ; 504-507
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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