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SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using 18O implantation
SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using 18O implantation
SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using 18O implantation
Hayashi, S. (author) / Sasaki, T. (author) / Kawamura, K. (author) / Matsumura, A. (author) / Yanagihara, K. (author) / Tanaka, K. (author)
APPLIED SURFACE SCIENCE ; 203-204 ; 504-507
2003-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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