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Initial oxynitridation of a Si(1 0 0) 2 x 1 surface by the annealing and low energy nitrogen ion exposure
Initial oxynitridation of a Si(1 0 0) 2 x 1 surface by the annealing and low energy nitrogen ion exposure
Initial oxynitridation of a Si(1 0 0) 2 x 1 surface by the annealing and low energy nitrogen ion exposure
Kim, K. J. (Autor:in) / Ihm, K. (Autor:in) / Jeon, C. (Autor:in) / Hwang, C. C. (Autor:in) / Kang, T. H. (Autor:in) / Kim, B. (Autor:in)
APPLIED SURFACE SCIENCE ; 212-213 ; 625-629
01.01.2003
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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