Initial oxynitridation of a Si(1 0 0) 2 x 1 surface by the annealing and low energy nitrogen ion exposure: Fid-Bau Portal

Initial oxynitridation of a Si(1 0 0) 2 x 1 surface by the annealing and low energy nitrogen ion exposure

Kim, K. J. / Ihm, K. / Jeon, C. / Hwang, C. C. / Kang, T. H. / Kim, B.

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Initial oxynitridation of a Si(1 0 0) 2 x 1 surface by the annealing and low energy nitrogen ion exposure

Kim, K. J. / Ihm, K. / Jeon, C. / Hwang, C. C. / Kang, T. H. / Kim, B.

Initial oxynitridation of a Si(1 0 0) 2 x 1 surface by the annealing and low energy nitrogen ion exposure

Kim, K. J. / Ihm, K. / Jeon, C. / Hwang, C. C. / Kang, T. H. / Kim, B.

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Document information

Title:

Initial oxynitridation of a Si(1 0 0) 2 x 1 surface by the annealing and low energy nitrogen ion exposure

Contributors:

Kim, K. J. (author) / Ihm, K. (author) / Jeon, C. (author) / Hwang, C. C. (author) / Kang, T. H. (author) / Kim, B. (author)

Published in:

APPLIED SURFACE SCIENCE ; 212-213 ; 625-629

Publication date:

2003-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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