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Radio frequency bias power effect on surface roughness of silicon carbide plasma etching
Radio frequency bias power effect on surface roughness of silicon carbide plasma etching
Radio frequency bias power effect on surface roughness of silicon carbide plasma etching
Kim, B. (Autor:in) / Kim, K. (Autor:in) / Lee, B. T. (Autor:in)
APPLIED SURFACE SCIENCE ; 217 ; 261-267
01.01.2003
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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