Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

Ohno, T. / Oyama, Y. / Suto, K. et al. | British Library Online Contents | 2003

The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

Ohno, T. / Oyama, Y. / Nishizawa, J. i. | British Library Online Contents | 2006

Application of selective epitaxy for formation of ultra shallow SiGe-based junctions

Hallstedt, J. / Isheden, C. / Ostling, M. et al. | British Library Online Contents | 2004

Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Ohno, T. / Oyama, Y. / Suto, K. et al. | British Library Online Contents | 2003

Application of δ-doping in GaAs tunnel junctions

Ragay, F.W. / Leys, M.R. / Wolter, J.H. | IET Digital Library Archive | 1994