Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11&unknown;20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, J. / Fukuda, K. / Kojima, K. et al. | British Library Online Contents | 2002

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Endo, T. / Okuno, E. / Sakakibara, T. et al. | British Library Online Contents | 2009

2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Perez-Tomas, A. / Placidi, M. / Baron, N. et al. | British Library Online Contents | 2010

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face

Harada, S. / Kato, M. / Yatsuo, T. et al. | British Library Online Contents | 2009

High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface

Masuda, T. / Harada, S. / Tsuno, T. et al. | British Library Online Contents | 2009