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    High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000&unknown;) Face Using H~2 Post-Oxidation Annealing

    New search for: Fukuda, K.
    New search for: Senzaki, J.
    New search for: Kojima, K.
    New search for: Suzuki, T.
    New search for: Bergman, P.
    New search for: Janzen, E.

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    High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000&unknown;) Face Using H~2 Post-Oxidation Annealing

    New search for: Fukuda, K.
    New search for: Senzaki, J.
    New search for: Kojima, K.
    New search for: Suzuki, T.
    New search for: Bergman, P.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000&unknown;) Face Using H~2 Post-Oxidation Annealing

    New search for: Fukuda, K.
    New search for: Senzaki, J.
    New search for: Kojima, K.
    New search for: Suzuki, T.
    New search for: Bergman, P.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000&unknown;) Face Using H~2 Post-Oxidation Annealing

    Contributors:

    Fukuda, K. (author) / Senzaki, J. (author) / Kojima, K. (author) / Suzuki, T. (author) / Bergman, P. / Janzen, E.

    Published in:

    Silicon Carbide and Related Materials 2002 ; 567-570

    MATERIALS SCIENCE FORUM ; 433/436

    Publication date:

    2003-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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