High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Endo, T. / Okuno, E. / Sakakibara, T. et al. | British Library Online Contents | 2009

2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Perez-Tomas, A. / Placidi, M. / Baron, N. et al. | British Library Online Contents | 2010

Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility

Okamoto, M. / Tanaka, M. / Yatsuo, T. et al. | British Library Online Contents | 2006

High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000&unknown;) Face Using H~2 Post-Oxidation Annealing

Fukuda, K. / Senzaki, J. / Kojima, K. et al. | British Library Online Contents | 2003

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Kobayashi, M. / Uchida, H. / Minami, A. et al. | British Library Online Contents | 2011