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Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11&unknown;0) Face
Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11&unknown;0) Face
Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11&unknown;0) Face
Senzaki, J. (Autor:in) / Kojima, K. (Autor:in) / Suzuki, T. (Autor:in) / Fukuda, K. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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