Current Analysis of Ion Implanted p^+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

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Al^+ Implanted 4H-SiC p^+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

Grossner, U. / Moscatelli, F. / Nipoti, R. | British Library Online Contents | 2014

Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum

Ohi, A. / Ohshima, T. / Yoshikawa, M. et al. | British Library Online Contents | 2002

Annealing studies of Al-implanted 6H-SiC in an induction furnace

Ottaviani, L. / Lazar, M. / Locatelli, M. L. et al. | British Library Online Contents | 2002

Hydrogen redistribution and enhanced thermal donor formation at post implantation annealing of p-type hydrogen implanted Czochralski silicon

Ulyashin, A. G. / Ivanov, A. I. / Khorunzhii, I. A. et al. | British Library Online Contents | 1999