Post-Implantation Annealing of Aluminum in 6H-SiC

Ottaviani, L. / Planson, D. / Locatelli, M. L. et al. | British Library Online Contents | 1998

Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC

Frazzetto, A. / Roccaforte, F. / Giannazzo, F. et al. | British Library Online Contents | 2012

Implantation and annealing studies of Tm-implanted GaN

Lorenz, K. / Alves, E. / Wahl, U. et al. | British Library Online Contents | 2003

Current Analysis of Ion Implanted p^+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Nipoti, R. / Bergamini, F. / Moscatelli, F. et al. | British Library Online Contents | 2006

Al^+ Implanted 4H-SiC p^+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

Grossner, U. / Moscatelli, F. / Nipoti, R. | British Library Online Contents | 2014