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On the mechanism of ion-implanted As diffusion in relaxed SiGe
On the mechanism of ion-implanted As diffusion in relaxed SiGe
On the mechanism of ion-implanted As diffusion in relaxed SiGe
Eguchi, S. (Autor:in) / Lee, J. J. (Autor:in) / Rhee, S. J. (Autor:in) / Kwong, D. L. (Autor:in) / Lee, M. L. (Autor:in) / Fitzgerald, E. A. (Autor:in) / Aberg, I. (Autor:in) / Hoyt, J. L. (Autor:in)
APPLIED SURFACE SCIENCE ; 224 ; 59-62
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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