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On the mechanism of ion-implanted As diffusion in relaxed SiGe

Eguchi, S. / Lee, J. J. / Rhee, S. J. / Kwong, D. L. / Lee, M. L. / Fitzgerald, E. A. / Aberg, I. / Hoyt, J. L.

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On the mechanism of ion-implanted As diffusion in relaxed SiGe

Eguchi, S. / Lee, J. J. / Rhee, S. J. / Kwong, D. L. / Lee, M. L. / Fitzgerald, E. A. / Aberg, I. / Hoyt, J. L.

On the mechanism of ion-implanted As diffusion in relaxed SiGe

Eguchi, S. / Lee, J. J. / Rhee, S. J. / Kwong, D. L. / Lee, M. L. / Fitzgerald, E. A. / Aberg, I. / Hoyt, J. L.

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Check availability in my library

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Document information

Title:

On the mechanism of ion-implanted As diffusion in relaxed SiGe

Contributors:

Eguchi, S. (author) / Lee, J. J. (author) / Rhee, S. J. (author) / Kwong, D. L. (author) / Lee, M. L. (author) / Fitzgerald, E. A. (author) / Aberg, I. (author) / Hoyt, J. L. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 59-62

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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